发明名称 MASK PROVIDING LOCALLY MODIFIED ILLUMINATION AND MANUFACTURING METHOD THEREFOR
摘要 <p>A mask providing a local modified illumination and a method of manufacture thereof is provided to improve DOF property according to a pattern as an incident angle which is income in a localized region is diffracted with a diffraction pattern. A mask(100) providing the local modified illumination comprises a transparent mask substrate(101), a first mask pattern(102), a second mask pattern(103), a diffraction pattern(150). The first mask patterns are formed into a first pattern pitch(P1) on the first area(110) of the front side of the mask substrate. The second mask patterns are formed into a second pattern pitch(P2) on the second part(120) of the mask substrate. The diffraction pattern is formed on the backplane of the mask substrate of the second part opposite side. The diffraction pattern changes the pathway of the light differently with the first area as the exposure light which is income to the second part of the mask substrate is selectively diffracted.</p>
申请公布号 KR20080109559(A) 申请公布日期 2008.12.17
申请号 KR20070058031 申请日期 2007.06.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, YONG KYOO
分类号 H01L21/027 主分类号 H01L21/027
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