| 摘要 |
1,181,695. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 March, 1967 [29 March, 1966], No. 13667/67. Heading H1K. A semi-conductor optical device comprises a silicon carbide body including a region which contains only chromium as the conductivitytype determining impurity. It is stated that such a region has P-type conductivity, and is transparent to light throughout the visible region. In the photo-voltaic cell shown the P and N-type regions 1, 2 of a SiC body contain chromium and nitrogen, respectively, as dopants, both in concentrations of 10<SP>19</SP> cm.<SP>-3</SP>. Both regions are 1 mm. thick, the chromium dopant being introduced by alloying or diffusion. Alternatively the chromium-doped SiC can be crystallized from a solution in chromium or chromium alloys. The contacts 4, 5 are of Au containing Ta and Al and of Au containing Ta, respectively, both being fused on to the SiC body, and both having a Pt wire 5, 7 attached thereto. A similar but differently dimensioned device may be used as an electroluminescent diode, and the invention may also be applied to photo-resistances. Al-doped SiC is stated to be known. |
