| 摘要 |
A monocrystalline making method is provided to steadily raise the monocrystalline in which the electric potential is zero and the crystalline morphology is excellent. A monocrystalline making method manufactures the monocrystalline from the melted source material by applying the horizontal magnetic field to the melted source material in the crucible(4) using the Czochralski method. The seed crystal is digested in the silicon solution by operating the crystalline driving unit. The seed crystal is pulled up by controlling the crystalline driving unit and the melting pots into predetermined condition. The magnetic field of horizontal direction is applied to the silicon solution in the melting pots by driving the horizontal magnetic device. The horizontal magnetic device fixes the center axis of the applied magnetic field to the constant position from the solution surface(3a) of the silicon solution.
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