| 摘要 |
A manufacturing method of the semiconductor device having the self-aligned contact plug is provided to reduce the defect factor generated in the formation of the contact plug self-aligned by the wiring patterns. A manufacturing method of the semiconductor device comprises the following processes. The underlying insulating layer(301) is formed on the semiconductor substrate(300a). The first and second landing pads(303,305) are formed on the underlying insulating layer. The leaching preventing film covering the first and second landing pads and underlying insulating layer is formed. The interlayer dielectric layer(311) is formed on the leaching preventing film. The wiring patterns(320a, 320b) which are parallel to on the interlayer dielectric layer are formed. The opening(323) is formed by etching the interlayer dielectric layer using wiring patterns as the etching mask in order to expose the leaching preventing film. The Leaching protecting patterns(309a, 309b) which cover the first landing pad are formed by etching the exposed leaching preventing film. The top isolation layer filling up openings is formed. The contact plug contacted with the second landing pad through the top isolation layer between the wiring patterns is formed.
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