发明名称 METHOD FOR FORMING STRUCTURE ON RESIST MATERIAL, AND ELECTRON BEAM EXPOSURE APPARATUS USED FOR THE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming structures on a resist material by which the structures can be formed without restriction concerning a structure direction or edge roughness, and an apparatus. <P>SOLUTION: The method for forming the structures includes a step of determining locations on a substrate surface where the resist material is set according to predetermined angles &alpha;, &beta; of the structures 231 to 234 to be formed, and setting the determined locations. Thus, the structures of arbitrary angles different from an integral multiple of 45&deg;, for reference coordinates 101, 102 can be formed, and patterns of arbitrary angles with desired edge roughness can be drawn in a short period of time. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008300830(A) 申请公布日期 2008.12.11
申请号 JP20080136540 申请日期 2008.05.26
申请人 ADVANCED MASK TECHNOLOGY CENTER GMBH & CO KG 发明人 TEUBER SILVIO;WAIBLINGER MARKUS
分类号 H01L21/027 主分类号 H01L21/027
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