SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to increase the manufacture yield of the semiconductor device by laminating the plurality of semiconductor chips in a three dimensional manner. A manufacturing method of the semiconductor device comprises the following processes. The interlayer insulating film(2) is formed on the semiconductor device formed on the first side(1a) of the semiconductor substrate(1). The pad(3) is electrically connected with the semiconductor device through the wiring which is formed inside the interlayer insulating film on the surface of the interlayer insulating film. The first resist film is formed on the second side(1b) which is opposite to the first side. The first resist layer is patterned in order to have the first opening. The first resist layer is removed and the insulating layer is formed on the second face of the semiconductor substrate including the inner wall of the first hole. The second resist is formed on the insulating layer and the second hole exposing the pad on the bottom surface.