THE METHOD AND APPARATUS FOR WRITING IN NON-VOLATILE MEMORY, AND THE MEMORY THEREOF

摘要

A nonvolatile memory writing method is provided to correct threshold voltage change due to the coupling and reduce an unnecessary recording operation without recording data in a dummy memory cell which is not used in the recording operation. A nonvolatile memory writing method is comprised of steps: programming an n-th memory cell by a first target voltage lower than a target threshold voltage of the n burn memory cell when recording data in the n-th and the(n-1)th memory cell successively; programming the(n-1)-th memory cell by target threshold voltage of the(n-1)th memory cell; programming the n-th burn memory cell by the target threshold voltage of the n-th memory cell when the n-th memory cell is the final memory cell of the memory cells.