Light emitting device with high light extraction efficiency

摘要

An exemplary solid-state light emitting device (10) includes a substrate (11), a light emitting structure (12), a first electrode (13) and a second electrode (14) have opposite polarities with each other. The light emitting structure (12) is formed on the substrate (11) and includes a first-type semiconductor layer (121) and a second-type semiconductor layer (123). The first electrode (13) is electrically connected with the first-type semiconductor layer (121). The second electrode (14) includes a transparent conductive layer (142) formed on the second-type semiconductor layer (123) and a metallic conductive layer (144) formed on a region of the transparent conductive layer (142) and electrically contacted therewith. Any point on the region is no more than 300 micrometers from a nearest part of the metallic conductive layer (144), and an exposed portion uncovered by the metallic conductive layer (144) of the region has an area of at least 80% of a total area of the transparent conductive layer (142).