发明名称 |
Transistor using an isovalent semiconductor oxide as the active channel layer |
摘要 |
A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.
|
申请公布号 |
US7462862(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20050257935 |
申请日期 |
2005.10.25 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
HOFFMAN RANDY L.;HERMAN GREGORY S. |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|