METHOD FOR FORMING METAL-SILICIDE LAYER IN SEMICONDUCTOR DEVICES USING PLASMA NITRIDATION

摘要

The method the fabricating the metal silicide of the semiconductor device is provided to control the thickness of the nitride diffusion film by using the plasma exposure. The method for manufacturing the metal silicide comprises as follows. The nitride thin film is formed on the silicon substrate. The metallic film is formed on the nitride thin film. The metal silicide is formed by performing a heat treatment on the thin film. The nitride thin film is formed through the plasma nitridation method. The Ti anti-oxidation layer for preventing the oxidation caused by the thermal budget is formed on the metal thin film. The Ti anti oxidation layer is formed after the metal thin film deposition is performed and exposed in air.