| 摘要 |
The image sensor and manufacturing method thereof are provided to prevent the leakage current by performing the plasma process on the second conductive type conductive layer and improved the photosensitivity. The image sensor comprises the substrate(110), the bottom electrode(130), the intrinsic layer(150), the second conductive type conductive layer(160), the diffusion barrier(170), the top transparent electrode(180). The substrate comprises the circuitry. The bottom electrode is successively formed in the top of the substrate. The diffusion barrier is formed on the second conductive type conductive layer. The top transparent electrode is formed on the diffusion barrier.
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