Vertical image sensors and methods of fabricating the same

摘要

A vertical CMOS image sensor includes a plurality of photodiodes formed vertically in a substrate to a first depth. The vertical CMOS image sensor further includes a plurality of signal processing devices formed to correspond to the plurality of photodiodes. The plurality of signal processing devices are formed to transmit signals generated from the plurality of photodiodes. Each of the signal processing devices is substantially formed on the same plane with a corresponding one of the plurality of photodiodes.