METHOD AND APPARATUS FOR FORMING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a thin film by using a raw material for MOCVD in the mist deposition method, by solving the problem that the mist deposition method uses a raw material used for the MOD method but cannot use a raw material for MOCVD. SOLUTION: The mist deposition method for forming a thin film comprises applying mist comprised of a raw material of a thin film and a solvent onto a heated substrate, whereby only solvent mist evaporates before it sticks to the substrate and a thin film is formed on the surface of the substrate. The thin film thus formed may be annealed to enhance its crystallinity. By enabling a mist deposition method according to the present invention to form a thin film from a raw material for MOCVD, a thin film electrode of iridium oxide or ruthenium oxide can be formed on a substrate, and hence a device such as RuO2/PZT/RuO2can be prepared at a low cost using a single thin-film forming apparatus for a mist deposition method according to the present invention. COPYRIGHT: (C)2009,JPO&INPIT