| 摘要 |
A method of making a thin film transistor comprising a zinc-oxide-containing semiconductor material and spaced apart first and second electrodes in contact with the material. The co-generation of high quality zinc oxide semiconductor films and contact electrodes is obtained, at low temperatures, using non-vacuum conditions, silver nanoparticles are deposited to form the source and drain and, upon heating, converted to conducting metal. Such an in-situ formation of the silver metal/zinc oxide interface provides superior transistor activity compared to evaporated silver.
|
