| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an amorphous carbon film and a method of manufacturing a semiconductor device using the same. SOLUTION: An amorphous carbon film is formed on a substrate by vaporizing a liquid hydrocarbon compound, which has chain structure with one double bond, and supplying the compound to a chamber, and ionizing the compound. The amorphous carbon film is used as a hard mask film. It is possible to easily control characteristics of the amorphous carbon film, such as a deposition rate, an etching selectivity, a refractive index (n), a light absorption coefficient (k), and stress, so as to satisfy user's requirements. In particular, it is possible to lower the refractive index (n) and the light absorption coefficient (k). As a result, it is possible to perform a photolithography process without forming an antireflection film that prevents the diffuse reflection of a lower material layer. Further, a small amount of reaction by-products is generated during a deposition process, and it is possible to easily remove reaction by-products that are attached on the inner wall of a chamber. For this reason, it is possible to increase a cycle of a process for cleaning a chamber, and to increase parts changing cycles of a chamber. As a result, it is possible to save time and cost. COPYRIGHT: (C)2009,JPO&INPIT
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