发明名称 |
Method for reducing device and circuit sensitivity to electrical stress and radiation induced aging |
摘要 |
In microelectronic circuits involving dielectric/semiconductor interfaces having interstitial sites in the dielectric, a method for hardening these interfaces by introducing a small atomic diameter inert gas into the interstitial sites.
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申请公布号 |
US7459403(B1) |
申请公布日期 |
2008.12.02 |
申请号 |
US20060380974 |
申请日期 |
2006.05.01 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
DEVINE RODERICK A. B.;HUGHES HAROLD L.;REVESZ AKOS G. |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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