发明名称 |
SEMICONDUCTOR DEVICE WITH DOPED TRANSISTOR |
摘要 |
<p>SEMICONDUCTOR DEVICE WITH DOPED TRANSISTOR A semiconductor device provides a substrate having a first region and a second region. A sacrificial first gate is formed in the first region. Source/drain are formed in the first region. A second region gate dielectric is formed in the second region. A second region gate is formed on the second region gate dielectric. A second region source/drain is formed in the second region. A sacrificial layer is formed over the sacrificial first gate, the source/drain, the first region, and the second region. The sacrificial first gate is exposed. A gate space is formed by removing the sacrificial first gate. A first region gate dielectric is formed in the gate space. A first region gate is formed on the first region gate dielectric. The sacrificial layer is removed.</p> |
申请公布号 |
SG147439(A1) |
申请公布日期 |
2008.11.28 |
申请号 |
SG20080076796 |
申请日期 |
2006.04.27 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
VERMA PURAKH RAJ;CHOO HSIA LIANG;KYUN SOHN DONG;GUOWEI ZHANG;HOE ANG CHEW;LING TAN YUN;LUN ZHAO;GON LEE JAE;FU CHONG YUNG |
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