TUNNEL TYPE MAGNETIC DETECTION ELEMENT

摘要

[PROBLEMS] To provide a tunnel type magnetic detection element which can improve configuration of a free magnetic layer, increase a resistance change ratio (?R/R), and reduce a coercive force Hc of the free magnetic layer. [MEANS FOR SOLVING PROBLEMS] An insulation barrier layer (5) is formed of Mg-O. The free magnetic layer (6) has an enhance layer (12), a first soft magnetic layer (13), an insert magnetic layer (14), and a second soft magnetic layer (15) which are overlaid in this order from the bottom. The insert magnetic layer (14) is formed, for example, of Co-Fe-B. Thus, by inserting the insert magnetic layer (14) formed by Co-Fe-B between the soft magnetic layers (13, 15), it is possible to effectively increase the resistance change ratio (?R/R) and reduce the coercive force Hc of the free magnetic layer (6).