DOPED BI-TE COMPOUNDS FOR THERMOELECTRIC GENERATORS AND PELTIER ARRANGEMENTS

摘要

A p-conductive or n-conductive semiconductor material contains a Ge-, Co-, Fe- and/or Ni-doped bismuth telluride of the general formula (I) or (II) Bi2-xDopuSeyTez (I) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.06 y = 0.01 to 1.0 y+z = 3.00 to 3.2 Bi2-xSb yDopuSezTev (II) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.4 y = 0 to 1 z = 0 to 1 z+v = 3.00 to 3.3.