发明名称 |
Semiconductor device having a fin structure and method of manufacturing the same |
摘要 |
A semiconductor device may include a fin structure having source/drain regions and channel fins connected between source/drain patterns. A gate insulation layer may be provided on the channel fins. A gate electrode may include lower gate patterns and an upper gate pattern. The lower gate patterns may extend in a vertical direction and contact the gate insulation layer. The upper gate pattern may extend in a second horizontal direction substantially perpendicular to the first horizontal direction. The upper gate pattern may be connected to upper portions of the lower gate patterns.
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申请公布号 |
US2008293203(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080219984 |
申请日期 |
2008.07.31 |
申请人 |
YOON JAE-MAN;LEE CHOONG-HO;LEE CHUL;PARK DONG-GUN |
发明人 |
YOON JAE-MAN;LEE CHOONG-HO;LEE CHUL;PARK DONG-GUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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