| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of easily preventing concentration of access on a specific memory cell in the semiconductor storage device and enabling the lifetime of the whole semiconductor storage device to be prolonged with respect to the rewriting lifetime of the memory cell. <P>SOLUTION: The semiconductor storage device has a pseudo random number generation circuit 11 and a latch circuit 12 and causes the latch circuit 12 to hold, at the timing of starting of a power source, a pseudo random number Ra generated in the pseudo random number generation circuit 11. An address conversion circuit (exclusive OR circuit) 13 in the semiconductor storage device converts bits of all or a part of addresses An input from an external part by the pseudo random number Ra. Thus, at the timing of starting of the power source, corresponding relationship between the addresses An input from an external part and the addresses An' of the memory cell are determined at random. <P>COPYRIGHT: (C)2009,JPO&INPIT |
