发明名称 |
Method for forming electrode for Group-III nitride compound semiconductor light-emitting devices |
摘要 |
A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.
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申请公布号 |
US2008293231(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080078066 |
申请日期 |
2008.03.26 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
GOSHONOO KOICHI;MORIYAMA MIKI |
分类号 |
H01L21/285;H01L33/10;H01L33/22;H01L33/32;H01L33/42 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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