<p>An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls.</p>
申请公布号
EP1994558(A1)
申请公布日期
2008.11.26
申请号
EP20070797101
申请日期
2007.01.30
申请人
ENTHONE, INCORPORATED
发明人
PANECCASIO, VINCENT, M., JR.;LIN, XUAN;FIGURA, PAUL;HURTUBISE, RICHARD;WITT, CHRISTIAN