| 摘要 |
A ferroelectric memory device and a memorizing method using a ferroelectric capacitor are provided to increase reliability in protecting memorized contents by increasing reliability of a read operation and lifetime with a simple configuration. In a ferroelectric memory device comprising a memory ferroelectric capacitor(C11), a load capacitor(Cb) is connected to the memory ferroelectric capacitor serially during a read operation of memorized contents. A read voltage applying unit applies a read voltage with a different polarity from a voltage causing a first polarization state of the memory ferroelectric capacitor and the load capacitor. A memorized contents judgement unit judges the memorized contents on the ground of a divided voltage generated in the memory ferroelectric capacitor while the read voltage is applied. A rewrite unit applies rewrite voltages of different polarities to the memory ferroelectric capacitor according to polarization states to recover the polarization state corresponding to the judged memorized contents.
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