| 摘要 |
A semiconductor device is provided to prevent the enlargement of the resistance of the Cu wiring and the Cu diffusion to the low dielectric constant material insulating layer. A semiconductor device comprises the insulating layer consisting of the low dielectric constant material in which the non-dielectric constant is smaller than SiO2; the interconnection groove(8) formed in the insulating layer; the first barrier(9) film consisting of SiO2 or SiCO; the Cu wiring(2) having the Cu which becomes in the interconnection groove with buried as the main component; the second barrier layer(10) consisting of the compound including Si and O and the predetermined metal element. The first barrier film is formed in profile of the interconnection groove. |
