发明名称 FLASH MEMORY SYSTEM SCANNING BAD BLOCK FAST AND BAD BOLCK MANAGING METHOD THEREOF
摘要 A flash memory system searching the bad block are provided to be capable of searching the information about the bad block of the flash memory device at high speed. A flash memory system searching the bad block comprises the followings: the flash memory device(110) which has the first address period and the second address period, and comprises in order to be exchanged the block address of the bad block belonging to the first address with the block address of the second address period; the memory controller(120) which controls the flash memory device in order to search the bad block information of the memory blocks belonging to the second address and in order to output the selected bad block information.
申请公布号 KR20080101951(A) 申请公布日期 2008.11.24
申请号 KR20070048123 申请日期 2007.05.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYEON, DAE SEOK
分类号 G06F12/14;G06F12/00 主分类号 G06F12/14
代理机构 代理人
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