| 摘要 |
PROBLEM TO BE SOLVED: To move a stress applied in the gate-width direction of a channel region in the direction improving a mobility while preventing the generation of a leakage at a time when forming a silicide layer to the surface of a source-drain region. SOLUTION: A semiconductor device has an element isolation region 13 buried and formed to a semiconductor substrate 11 so as to hold the element forming region 12 of the semiconductor substrate 11, a gate electrode 22 formed so as to cross the element forming region 12 through a gate insulating film 21 and the source-drain regions 27-28 formed to the element forming region 12 on both sides of the gate electrode 22. The channel region 14 composed of the element forming region 12 under the gate electrode 22 is formed so as to be projected from the element isolation region 13, and the source-drain regions 27 and 28 are formed up to places deeper than the surface of the element isolation region 14. COPYRIGHT: (C)2009,JPO&INPIT
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