| 摘要 |
In forming a TFT and a storage capacitance element, whereas sharing with each other the conductive film and the insulation film, which are components of the TFT and the storage capacitance element, contributes to improving production efficiency, it is difficult to obtain a storage capacitance element that is optimized independently of the TFT. A TFT substrate provided with a TFT and a storage-capacitance element according to the present invention is characterized in that the storage-capacitance element is obtained that includes an electrically conductive film and an insulation film each being different from those used in the TFT. Furthermore, in order to form such a structure, a method of manufacturing the TFT substrate is provided that achieves both flexibility in design and efficiency in production without need for addition of any photolithography processes.
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