| 摘要 |
A sputtering target and a backing plate are diffusion-bonded with or without an insert or inserts interposed there-between so as to have a solid phase diffusion-bonded interface. The sputtering target substantially maintains its metallurgical characteristic and properties even though it has been diffusion-bonded to the backing plate. The solid-diffusion bonding of the target and backing plate, is achieved at a low temperature and pressure and results in interdiffusion of constituent atoms to attain high adhesion and bond strength without attendant deterioration or large deformation of the target material, while inhibiting the crystal growth in the target material. The bond undergoes no abrupt decrease in bond strength upon elevation of the service temperature. One hundred percent bonding is achieved with non-bonded portions such as pores left along the interface. |
