发明名称 Semiconductor memory device changing refresh interval depending on temperature
摘要 A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.
申请公布号 US7453754(B2) 申请公布日期 2008.11.18
申请号 US20070713029 申请日期 2007.03.02
申请人 FUJITSU LIMITED 发明人 SHIROTA AKINOBU;KAWABATA KUNINORI
分类号 G11C7/00;G11C7/04;G11C11/406;G11C11/4063 主分类号 G11C7/00
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