发明名称 |
METHOD OF DISCHARGING GAS FROM CONTINUOUS OVEN AND GAS DISCHARGE STRUCTURE |
摘要 |
A to-be-burned object including a metal Si component or SiC or Si<SUB>3</SUB>N<SUB>4 </SUB>can be burned in such a manner that vaporized SiO can be safely exhausted without causing SiO attached to a wall of a furnace or an inner face of an exhaust duct. An exhaust method of a continuous furnace for continuously burning a to-be-burned object containing a metal Si component or highly-fire-resistant SiC or Si<SUB>3</SUB>N<SUB>4 </SUB>includes steps of 1) exhausting in-furnace gas including SiO vaporized during a burning process. An exhaust duct 2 used for this exhaust is provided at an upper part of a side wall 12 of the furnace having a higher temperature (1300 degrees C. or more) than a concentration temperature of SiO vaporized during a burning process. 2) oxidizing the exhausted SiO at the outside of the furnace to detoxify SiO. The in-furnace gas exhausted by the exhaust duct 2 is guided to an exhaust pipe 3 connected to an outlet of the exhaust duct 2 at the outside of the furnace. This exhaust pipe 3 includes oxygen supply holes 31 a and 31 b. By sending oxygen supplied from an appropriate oxygen supply source into the exhaust pipe 3, SiO guided to the exhaust pipe 3 reacts with oxygen and is detoxified.
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申请公布号 |
US2008280244(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
US20080175251 |
申请日期 |
2008.07.17 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
MIYATA JOTARO;GOSHIMA TAKASHI;IHARA CHIKASHI |
分类号 |
F27B9/30;F23J15/00;F27D7/02 |
主分类号 |
F27B9/30 |
代理机构 |
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代理人 |
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地址 |
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