| 摘要 |
PROBLEM TO BE SOLVED: To check the damage rate of a photosensitive film and the infiltration of ion impurities during an etching process. SOLUTION: A method of fabricating a semiconductor device includes a step that forms gate insulating film patterns and gate electrode film patterns on a semiconductor substrate, a step that forms a photosensitive film pattern where a part of a region between the gate patterns is exposed on the semiconductor substrate including the gate electrode film patterns, a step that forms a protective film of lower etching speed than that of the semiconductor substrate on a surface of the photosensitive film pattern, a step that forms a first trench on the semiconductor substrate in an etching process where the protective film and photosensitive film pattern are used as the etching masks, and a step that performs an ion implantation process on the semiconductor substrate in which the first trench is formed. COPYRIGHT: (C)2009,JPO&INPIT
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