STRAINED CHANNEL P-TYPE JFET AND FABRICATION METHOD THEREOF

摘要

Enhanced hole mobility p-type JFET and fabrication methods. A p-type junction field effect transistor (200) including a substrate of n-type, a source region (204) and a drain region (206) formed in the substrate; wherein the source region and the drain region are p-type doped and at least one of the source region and the drain region is formed with silicon-germanium compound (Sil-xGex), a p-type channel (208) disposed between the source and the drain in the substrate; wherein compressive stress is induced in the p-type channel substantially along a channel length by the Sil-xGex, and an n-type gate region (210) within the p-type channel. The n-type gate region is electrically coupled to a gate contact (216) that is operable to modulate a depletion width of the p-type channel.