| 摘要 |
A method of forming a carbon film on a metal substrate at a low temperature has steps of preparing a metal substrate having a softening temperature; forming a catalytic layer having a thickness of greater than 0.01 mum on the metal substrate, and forming a carbon film on the catalytic layer by chemical vapor deposition (CVD) at a reaction temperature less than the softening temperature of the metal substrate. A carbonaceous material is carried into a CVD reaction area by a carrier gas and is thermally decomposed at a reaction temperature between 300° C. and 1000° C. to form the carbon film having a thickness between 0.1 mum and 10 mum on the catalytic layer.
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