| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reflow method and a pattern forming method for forming a pattern of a desired shape when resist portions adjacent to each other are integrated by a reflow process to form a resist layer of another pattern. <P>SOLUTION: The method includes: forming a resist layer of a first pattern on a layer to be etched; subjecting the layer to be etched to first etching with the resist layer of the first pattern as a mask; dropping a resist solution onto a place between resist portions adjacent to each other in the first pattern to form a resist layer of an auxiliary pattern; softening the resist layer of the first pattern and the resist layer of the auxiliary pattern to flow so as to integrate the adjacent resist portions with the resist portion of the auxiliary pattern to form a resist layer of a second pattern; and subjecting the layer to be etched to second etching with the resist layer of the second pattern as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
