| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate having a p-type semiconductor layer capable of avoiding deterioration in the film quality of the p-type semiconductor layer and activating p-type impurities in the p-type semiconductor layer. SOLUTION: The manufacturing method of a substrate comprises: a substrate preparation process S100 for preparing an epitaxial substrate having a GaN layer containing p-type impurities; and a laser irradiation process S300 for applying laser beams to the GaN layer containing p-type impurities in the epitaxial substrate while the epitaxial substrate is dipped into a solvent. COPYRIGHT: (C)2009,JPO&INPIT
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