发明名称 |
HOLLOW CATHODE DISCHARGE SPUTTERING SYSTEM |
摘要 |
A new the hollow cathode discharge sputtering system increasing the deposition area of substrate is provided. Moreover, the utilization ratio of the sputtering electrode is increased and a substrate surface deposit can be efficiently performed. A hollow cathode discharge sputtering system comprises as follows, A) a vacuum chamber(10) in which the gas injector and gas exhaust port are formed in one side; B) a plasma-generating of the discharge gas by the hollow cathode discharge it is posted at the vacuum inside of chamber; C) a power source(30) supplying the electric discharge energy to the hollow cathode discharge reactor; and D) a substrate(40) arranged in the lower part of the bottom plate.
|
申请公布号 |
KR20080098825(A) |
申请公布日期 |
2008.11.12 |
申请号 |
KR20070044166 |
申请日期 |
2007.05.07 |
申请人 |
SEMTECHNOLOGY CO., LTD. |
发明人 |
LEE, BONG JU;KIM, YOUNG WOO;KIM, YONG HYUN;RYU, SEUNG MIN;JANG, SUNG GI |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|