发明名称 HOLLOW CATHODE DISCHARGE SPUTTERING SYSTEM
摘要 A new the hollow cathode discharge sputtering system increasing the deposition area of substrate is provided. Moreover, the utilization ratio of the sputtering electrode is increased and a substrate surface deposit can be efficiently performed. A hollow cathode discharge sputtering system comprises as follows, A) a vacuum chamber(10) in which the gas injector and gas exhaust port are formed in one side; B) a plasma-generating of the discharge gas by the hollow cathode discharge it is posted at the vacuum inside of chamber; C) a power source(30) supplying the electric discharge energy to the hollow cathode discharge reactor; and D) a substrate(40) arranged in the lower part of the bottom plate.
申请公布号 KR20080098825(A) 申请公布日期 2008.11.12
申请号 KR20070044166 申请日期 2007.05.07
申请人 SEMTECHNOLOGY CO., LTD. 发明人 LEE, BONG JU;KIM, YOUNG WOO;KIM, YONG HYUN;RYU, SEUNG MIN;JANG, SUNG GI
分类号 C23C14/34 主分类号 C23C14/34
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