THIN FILM TRANSISTOR AND MANUFACTURING METHOD FOR THE SAME

摘要

The thin film transistor of the stable electrical characteristic can be provided by forming the passivation layer with the compound of the halogen and group 2 elements in manufacturing a thin-film transistor. The thin film transistor and manufacturing method thereof comprise the substrate(21) having the insulating layer(22); the gate(23) formed in the partial region of insulating layer; the gate isolation layer formed on the insulating layer and gate; the channel region(25) formed in the region corresponding to the gate on the gate isolation layer; the source(26a) and drain(26b) contacting the both sides of the channel area; the passivation layer(27) formed on the channel region, including the compound of the halogen and group 2 elements.