| 摘要 |
An alkaline barrier polishing slurry is provided to obtain aqueous slurry useful in the chemical mechanical polishing of a semiconductor substrate having a tantalum-containing barrier layer and a copper interconnect. An alkaline barrier polishing slurry comprises an imine barrier remover 0.02 - 5 weight% selected from an oxidizer 0 - 5 weight%, silica particles 0.1 - 25 weight%, polyvinylpyrrolidone 0.001 - 3 weight%, formamidine, formamidine derivative, formamidine salt, guanidine, guanidin derivative, guanidine salt and their mixture; carbonate 0.02 - 5 weight%; an inhibitor 0.01 - 10 weight% for reducing the etching of the copper interconnect; a complexing agent 0.001 - 10 weight%; and the balance of water. The slurry has pH of 9-11.
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