SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problem wherein connection resistance values among wiring layers are difficult to reduce owing to oxide films formed among wiring layers in a conventional semiconductor device.

SOLUTION: In the semiconductor device, an opening section 22 is formed to a spin coating resin film 21 on first metallic layers 14 to 18 embedding opening regions 8 to 12 connecting a first wiring layer 3 and a second wiring layer. A Cr layer configuring a metallic layer 23 for a plating and a Cu plating layer 24 are connected in the opening section 22. According to this configuration, sections among crystal grains are widened in the Cr layer on the first metallic layers 14 to 18, and a coarse region is formed. The alloy layer of a second metallic layer 19 and the Cu plating layer 24 is formed in the coarse region of the Cr layer, and the connection resistance value is reduced.

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