| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a polycrystalline semiconductor film which can be used for a semiconductor device, by irradiating an amorphous semiconductor film with a femtosecond laser beam to crystallize the film. SOLUTION: By using a femtosecond laser beam for laser crystallization, when an amorphous semiconductor film over which a cap film is formed is laser-crystallized, crystallization of the semiconductor film and removal of the cap film can be performed at the same time. Thus, a subsequent step of removing the cap film can be eliminated. COPYRIGHT: (C)2009,JPO&INPIT |
