| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving an ESD resistance in a configuration, having a plurality of lateral-type DMOS elements. SOLUTION: In the semiconductor device with a plurality of LDMOS elements, a first conductivity-type high-concentration layer having an impurity concentration higher than that of a semiconductor layer is formed on an opposite surface of the well forming surface of the semiconductor layer, together with the semiconductor layer as a forming region for the plurality of LDMOS elements in a semiconductor substrate. In the semiconductor device, a drain electrode is formed directly over the opposite surface of a boundary, with the semiconductor layer of at least the high-concentration layer as the rear of a gate electrode forming surface in the semiconductor substrate, and the drain electrode and each of a plurality of drain regions are electrically connected. COPYRIGHT: (C)2009,JPO&INPIT |
