发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To minimize influence to a chip area when biasing a substrate for performance correction. SOLUTION: A semiconductor integrated circuit device has a functional block. The functional block has a plurality of rows in which a plurality of primitive cells 31 for carrying out predetermined operations are provided respectively and a plurality of substrate contact cells 32 provided in the rows for respectively supplying substrate potential to the plurality of primitive cells 31. The plurality of substrate contact cells 32 are respectively provided to meet predetermined distance standard for the adjacent primitive cell 31 to which the substrate potential is supplied and linearly provided along the direction orthogonal to the rows. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270429(A) 申请公布日期 2008.11.06
申请号 JP20070109593 申请日期 2007.04.18
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP 发明人 HARA HIROYUKI;WATANABE YOSHINORI
分类号 H01L21/82;H01L21/822;H01L27/04 主分类号 H01L21/82
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