| 摘要 |
In a semiconductor substrate ( 1 ), impurity material, for example a metal, is distributed in a layer-like zone ( 3 ) in such a way that said zone reflects radiation ( 6 ), which is generated or detected by an optoelectronic component, for example. Said layer-like zone ( 3 ) is fabricated by implantation of the impurity material into the substrate ( 1 ) and subsequent heat treatment for crystallization of the impurity material. Such a substrate is suitable in particular for avoiding the penetration of radiation ( 6 ), which is generated for example by radiation-emitting structures ( 5 ) applied to the substrate, by reflection in a region of the substrate ( 1 ) near the surface and thus for reducing the absorption losses.
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