FLASH MEMORY WITH SENSING AMPLIFIER USING LOAD TRANSISTORS DRIVEN BY COUPLED GATE VOLTAGES

摘要

A memory including a plurality of memory cells, a sensing load, a reference load, a control circuit and a comparator. Each of the memory cells can store a bit data and provide a driving current according to the bit data. The sensing load is driven by the driving current and a driving voltage to generate a sensing voltage, and the reference load is driven by the driving voltage to generate a reference voltage. The control circuit can control the driving voltage to drive the sensing load or the reference load such that the sensing voltage or the reference voltage is kept constant while the driving current changes. The comparator is for comparing the sensing voltage with the reference voltage and therefore determining the bit data stored in the memory cell that provides the driving current.