SEMICONDUCTOR DEVICE INSPECTING METHOD AND SEMICONDUCTOR DEVICE INSPECTING APPARATUS

摘要

With respect to a structure (A) composed of a diffusion region in a semiconductor device structure to be inspected, intensity of an electromagnetic wave oscillation waveform generated by pulse laser beam irradiation is compared with previously measured intensity of an electromagnetic wave oscillation waveform outputted when the structure (A) of a reference device is irradiated with the pulse laser beam. After correction (S14) of electromagnetic wave detection sensitivity, a semiconductor device to be inspected is inspected. Thus, a measurement error due to fluctuation of an electromagnetic wave detection sensitivity of an inspecting apparatus is eliminated, and conformity judgment (S16) is accurately performed.