发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device is disclosed. The method of fabricating a semiconductor device provides a semiconductor substrate; forming a gate stack overlying the semiconductor substrate; forming spacers each having a first inner spacer and a second outer spacer on sidewalls of the gate stack; forming a protective layer on sidewalls of the spacers, covering a part of the semiconductor substrate, wherein an etching selectivity of the protective layer is higher than that of the first inner spacer.
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申请公布号 |
US2008268602(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080013528 |
申请日期 |
2008.01.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG CHIEN-LI;CHANG SUN-JAY;HSIEH TUNG-HENG;CHEN YUNG-SHUN |
分类号 |
H01L21/336;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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