| 发明名称 |
Beta-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method |
| 摘要 |
A method for growing a beta-Ga<SUB>2</SUB>O<SUB>3 </SUB>single includes preparing a beta-Ga<SUB>2</SUB>O<SUB>3 </SUB>seed crystal and growing the beta-Ga<SUB>2</SUB>O<SUB>3 </SUB>single crystal from the beta-Ga<SUB>2</SUB>O<SUB>3 </SUB>seed crystal in a predetermined direction.
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| 申请公布号 |
US2008265264(A1) |
申请公布日期 |
2008.10.30 |
| 申请号 |
US20080155991 |
申请日期 |
2008.06.12 |
| 申请人 |
WASEDA UNIVERSITY |
发明人 |
ICHINOSE NOBORU;SHIMAMURA KIYOSHI;AOKI KAZUO;GARCIA VILLORA ENCARNACION ANTONIA |
| 分类号 |
C30B23/02;C30B25/00;H01L33/02;H01L33/26 |
主分类号 |
C30B23/02 |
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