| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a memory device by forming a silicide region and by preventing an increase in metal element concentration in a channel formation region. SOLUTION: A nonvolatile semiconductor memory device has a semiconductor layer that has a source region and a drain region, and a channel formation region provided between the source region and the drain region. A first insulating layer, a first gate electrode, a second insulating layer, and a second gate electrode are successively superposingly provided on the semiconductor layer. A part or all of the source and drain regions is formed of a nickel silicide layer. An insulating film covers the periphery of the first gate electrode, containing a noble gas element. COPYRIGHT: (C)2009,JPO&INPIT
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