发明名称 FUSE ELEMENT STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a fuse element structure capable of reducing area required for arranging a fuse element and capable of arranging the fuse element with high density, and to provide a semiconductor device. SOLUTION: The fuse element structure includes: a first resistance value variable material layer 11 extended in a first direction; a second resistance value variable material layer 21 overlapped to the first one 11 in a plan view; a reference power supply wiring layer 3 arranged between the first and second resistance value variable material layers 11, 21; a plurality of drawing wiring 13 extended in a second direction crossing the first one; a plurality of first vias 12 connecting each of the plurality of first drawing wiring 13 to the first resistance value variable material layer 11; a plurality of second drawing wiring 23 extended in the second direction; and a plurality of second vias 22 connecting each of the plurality of second drawing wiring 23 to the second resistance value variable material layer 21. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008263060(A) 申请公布日期 2008.10.30
申请号 JP20070104688 申请日期 2007.04.12
申请人 ELPIDA MEMORY INC 发明人 KOBAYASHI HIRONAO
分类号 H01L21/822;H01L21/82;H01L27/04 主分类号 H01L21/822
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